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dc.contributor.authorVuppunuthala S.; Pasupureddi V.S.en_US
dc.date.accessioned2025-01-14T08:44:26Z-
dc.date.available2025-01-14T08:44:26Z-
dc.date.issued2024-
dc.identifier.citation0en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSII.2023.3324584-
dc.identifier.urihttp://idr.iitbbs.ac.in/jspui/handle/2008/5294-
dc.description.abstractIn large-scale neuromorphic systems, a spiking neural network (SNN) provides a promising solution for energy-efficient computing. Optimizing SNN building blocks like neurons and synapses can further enhance computing efficiency. Due to their simplicity and computational efficiency, integrate-and-fire neuron (I&F) models are widely used in SNNs. In the past proposals of I&F neuron models, the main issue is the short-circuit currents in CMOS inverters, which significantly inhibit the circuit's optimal performance and energy efficiency. This brief presents an energy-efficient differential-pair integrator (DPI) based I&F silicon neuron (SiN) circuit by utilizing the subthreshold source-coupled logic (STSCL) circuit topology as a replacement for CMOS inverters and incorporating a low supply voltage to mitigate leakage currents effectively. The proposed SiN is implemented in 65 nm CMOS technology with a supply voltage of 0.5-V and has an energy consumption of 3.6 pJ/spike with a spiking frequency (rate) of 30 Hz. � 2004-2012 IEEE.en_US
dc.language.isoenen_US
dc.subjectAfter-hyperpolarization (AHP); differential-pair integrator (DPI); integrate-and-fire neuron; silicon neuron; spiking neural network; subthreshold source-coupled logicen_US
dc.title3.6-pJ/Spike, 30-Hz Silicon Neuron Circuit in 0.5-V, 65-nm CMOS for Spiking Neural Networksen_US
dc.typeArticleen_US
Appears in Collections:Research Publications

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