Rathore S.; Kumar S.; Shakir M.; Bagga N.; Dasgupta S.2025-02-1720240http://dx.doi.org/10.1109/EDTM58488.2024.10511703https://idr.iitbbs.ac.in/handle/2008/5451Evaluating different variability merits is a crucial research step to look after the reliability and aging of the device. Generally, the self-healing effect (SHE) is a prime factor in scaled geometrical devices. In this paper, we performed a SHE-induced performance investigation of the vertically stacked Forksheet (FS) FET. Using well-calibrated TCAD setup, we analyzed: (i) impact of SHE-induced performance degradation on nFET/pFET (self-side) and either side of the dielectric wall (a separating wall between nFET & pFET); (ii) the significance of concentration and location of the trap charges present at Si-SiO2 and sheet-dielectric wall (DW) interface; (iii) the impact of ambient temperature on FSFET; (iv) the prediction of early aging using a well-defined merit of threshold voltage (V_ th ) shift by �50 mV. Thus, the proposed investigation is worth acquiring the design guideline of a reliable Forksheet FET. � 2024 IEEE.enEarly Aging; Forksheet FET; Interface Traps; Reliability; Self-HeatingConference paper