A 2 7 -1, 20-Gb/s, Low-Power, Charge-Steering Half-Rate PRBS Generator in 1.2�V, 65�nm CMOS

dc.contributor.authorGovindaswamy P.K.; Pasupureddi V.S.R.en_US
dc.date.accessioned2025-02-17T09:45:58Z
dc.date.issued2021
dc.description.abstractIn this work, we propose a 27-1, 20-Gb/s, low-power, charge-steering, half-rate pseudorandom bit sequence (PRBS) generator in 1.2 V, 65 nm CMOS. At the target data rate, the proposed charge-steering implementation has the lowest power consumption of 0.2 mW/Gb/s compared to the current-mode PRBS generator implementations, thanks to the discrete nature of the charge-steering latch circuit topology, which consumes a power of 22.3 ? W/Gb/s, whereas the CML latch consumes 60 ? W/Gb/s. The post-layout performance of the implementation shows a differential output voltage swing of 1.5 V, timing jitter of 5 ps and figure of merit of 0.038-pJ/bit at 20-Gb/s and it occupies an area of 0.026 mm 2. Thus, the proposed power efficient charge-steering half-rate PRBS generator implementation is an attractive candidate for on-chip bit-error-rate test and measurement applications. � 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.identifier.citation1en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00034-021-01732-7
dc.identifier.urihttps://idr.iitbbs.ac.in/handle/2008/3253
dc.language.isoenen_US
dc.subjectCharge-steering; Current-mode; Pseudorandom bit sequence generator; Voltage-modeen_US
dc.titleA 2 7 -1, 20-Gb/s, Low-Power, Charge-Steering Half-Rate PRBS Generator in 1.2�V, 65�nm CMOSen_US
dc.typeArticleen_US

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