Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model
| dc.contributor.author | MingRui L. | en_US |
| dc.contributor.author | Hariharaputran R. | en_US |
| dc.contributor.author | Khoo K.H. | en_US |
| dc.contributor.author | Hongmei J. | en_US |
| dc.contributor.author | Wu S. | en_US |
| dc.contributor.author | Joshi C.A. | en_US |
| dc.contributor.author | Mangipudi K.R. | en_US |
| dc.contributor.author | Quek S.S. | en_US |
| dc.contributor.author | Wu D.T. | en_US |
| dc.contributor.author | Narayanaswamy S. | en_US |
| dc.contributor.author | Srinivasan B.M. | en_US |
| dc.date.accessioned | 2025-02-17T08:33:32Z | |
| dc.date.issued | 2019 | |
| dc.description.abstract | We present a kinetic Monte Carlo (KMC) model for the electroplating of through silicon vias. The KMC model includes the chemical and transport properties of the copper ions, suppressors and accelerators in the electrolyte. We have used density functional theory calculations to get the relative values of the barriers for the additives. We present the results obtained from the KMc simulations for different aspect ratios and nucleation barriers. � 2019 IEEE. | en_US |
| dc.identifier.citation | 1 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/EDTM.2019.8731250 | |
| dc.identifier.uri | https://idr.iitbbs.ac.in/handle/2008/2310 | |
| dc.language.iso | en | en_US |
| dc.subject | density functional theory | en_US |
| dc.subject | electroplating | en_US |
| dc.subject | kinetic Monte Carlo | en_US |
| dc.subject | Through silicon via | en_US |
| dc.title | Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model | en_US |
| dc.type | Conference Paper | en_US |