NiO/Ni2O3 based top gated junctionless field effect device for selective Cr(VI) ion detection in water
| dc.contributor.author | Mishra S.; Mahalik S.; Sengupta A.; Eshore A.N.; Guha P.K.; Dey S. | en_US |
| dc.date.accessioned | 2025-02-17T11:20:30Z | |
| dc.date.issued | 2024 | |
| dc.description.abstract | We demonstrated NiO/Ni2O3 (semiconductor/dielectric) top gated field effect device for Cr(VI) detection. The device showed excellent sensing with a maximum response of 85.68 times at V_GS= -1.6V for 100 ppm of Cr(VI). The device was highly selective for Cr(VI) over other comparable heavy metals ions at the same operating voltage with high stability and repeatability. Hence, the fabricated device can be used for efficient sensing of Cr(IV) ions as opposed to other available solutions. � 2024 IEEE. | en_US |
| dc.identifier.citation | 0 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/EDTM58488.2024.10512090 | |
| dc.identifier.uri | https://idr.iitbbs.ac.in/handle/2008/5395 | |
| dc.language.iso | en | en_US |
| dc.subject | Cr(VI) ion sensor; Ni2O3 dielectric; room temperature synthesis; three terminal sensor; top gate | en_US |
| dc.title | NiO/Ni2O3 based top gated junctionless field effect device for selective Cr(VI) ion detection in water | en_US |
| dc.type | Conference paper | en_US |