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dc.contributor.authorMohapatra S.en_US
dc.contributor.authorSahu P.K.en_US
dc.contributor.authorMurty N.N.en_US
dc.date.accessioned2020-01-13T11:41:21Z-
dc.date.available2020-01-13T11:41:21Z-
dc.date.issued2018-
dc.identifier.urihttp://dx.doi.org/10.1109/EDKCON.2018.8770414-
dc.identifier.urihttp://10.10.32.48:8080/jspui/handle/2008/1651-
dc.description.abstractDiamond based photoconductors intended for use as radiation detectors are simulated in this work in SYNOPSYS � Sentaurus TCAD. Simulations are carried out by including the model of native defects for single-crystal and poly-crystal diamond detectors grown by CVD process. The models are validated by comparing the simulations with the reported experimental data. The explanation of the results in terms of the diamond band-gap and the comparative analysis of the dark currents of both the detectors have also been presented. The temperature dependant simulation is also presented to substantiate the developed model at high temperature. � 2018 IEEE.en_US
dc.language.isoenen_US
dc.subjectdevice modeling and TCAD simulationsen_US
dc.subjectDiamond detectorsen_US
dc.titleNumerical Modeling of Native Defects in CVD Grown Diamond Photodetectorsen_US
dc.typeConference Paperen_US
Appears in Collections:Research Publications

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