IDR Logo

Please use this identifier to cite or link to this item: http://idr.iitbbs.ac.in/jspui/handle/2008/1651
Title: Numerical Modeling of Native Defects in CVD Grown Diamond Photodetectors
Authors: Mohapatra S.
Sahu P.K.
Murty N.N.
Keywords: device modeling and TCAD simulations
Diamond detectors
Issue Date: 2018
Abstract: Diamond based photoconductors intended for use as radiation detectors are simulated in this work in SYNOPSYS � Sentaurus TCAD. Simulations are carried out by including the model of native defects for single-crystal and poly-crystal diamond detectors grown by CVD process. The models are validated by comparing the simulations with the reported experimental data. The explanation of the results in terms of the diamond band-gap and the comparative analysis of the dark currents of both the detectors have also been presented. The temperature dependant simulation is also presented to substantiate the developed model at high temperature. � 2018 IEEE.
URI: http://dx.doi.org/10.1109/EDKCON.2018.8770414
http://10.10.32.48:8080/jspui/handle/2008/1651
Appears in Collections:Research Publications

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.